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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1568 DESCRIPTION With TO-220F package Complement to type 2SD2399 High DC current gain. Low saturation voltage. DARLINGTON APPLICATIONS For power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Fig.1 simplified outline (TO-220F) and symbol HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Collector-base voltage SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -80 -80 -7 -4 -6 UNIT V V V A A Open collector TC=25ae PC 30 W 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1568 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50|I A; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA; IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA -1.0 -3.0 V ICBO Collector cut-off current VCB=-80V;IE=0 -100 |I A IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain COB fT Output capacitance Transition frequency ANG CH IC=-2A ; VCE=-3V 1000 10000 IE=0 ; VCB=-10V;f=1MHz IN EMIC ES IC=-0.5A ; VCE=-5V;f=10MHz DUC ON 35 12 TOR pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1568 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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